Ultrahigh-vacuum sample transfer device with low-temperature capability

N.J. DiNardo; J.E. Demuth; W.A. Thompson; P.G. Ledermann

doi:10.1063/1.1137966

Review of Scientific Instruments

Paper

01 Dec 1984

Ultrahigh-vacuum sample transfer device with low-temperature capability

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Abstract

The design of a novel sample transfer device for use in surface studies in an ultrahigh-vacuum environment is discussed. The principle feature of this design is a broad sample temperature range (∼32-∼1270 K).

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Abstract

Related

Temperature-dependent electronic excitations of the Ge(111) -2×1 surface

Electronic transitions of Ar, Xe, N2, CO physisorbed on Ag(111) and Al(111)

Enhanced raman scattering from carbon layers on silver

REAL-TIME STUDY OF PARTICLE-INDUCED DISORDERING OF THE Si(111) - 7 multiplied by 7 SURFACE BY OPTICAL SECOND-HARMONIC GENERATION.

Electronic transitions of Ar, Xe, N₂, CO physisorbed on Ag(111) and Al(111)