Marwan H. Khater, Zhen Zhang, et al.
IEEE Electron Device Letters
Contact resistances are directly measured for contacts with sizes from 25 to 330 nm using e-beam based nano-TLM devices. Record low contact resistivities ∼1.5× 10-9 Ω · cm2 are extracted from Ni(Pt) silicide contacts on in situ boron-doped Si0.7Ge 0.3 with a chemical boron-doping density of 2× 10 21/cm3. This is very promising for pMOS applications beyond the 10-nm node. A clear dependence of contact resistance on the silicide thickness has also been found. © 1980-2012 IEEE.
Marwan H. Khater, Zhen Zhang, et al.
IEEE Electron Device Letters
Qitao Hu, Si Chen, et al.
IEEE Electron Device Letters
Dechao Guo, G. Karve, et al.
VLSI Technology 2016
Michael A. Guillorn, Josephine Chang, et al.
VLSI Technology 2011