M. Yang, M. Ieong, et al.
IEDM 2003
A planar, triple-self-aligned, double-gate GET process is implemented where a unique sidewall source/drain structure permits self-aligned patterning of the back-gate layer after the source/drain (S/D) structure is in place. This allows coupling the silicon thickness control inherent in a planar, unpatterned layer with VLSI self-alignment techniques and also gives independently controlled front and back gates. Moreover, double-gate FET (DGFET) operation is demonstrated with good transport at both interfaces.
M. Yang, M. Ieong, et al.
IEDM 2003
H. Sinha, D.B. Straight, et al.
JVSTA
D. Singh, L.T. Shi, et al.
Journal of Electronic Materials
K.L. Lee, D. Boyd, et al.
ESSDERC 2001