O.F. Schirmer, W. Berlinger, et al.
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Paper
Tunneling in AlGaAs by Γ-X scattering
Abstract
The tunneling rate is calculated in a AlGaAs (100)-oriented barrier in GaAs, for a Fowler-Nordheim process in which electrons are scattered between the Γ minimum and the four lateral X minima by the alloy disorder. The effective exponent is found to be that given by the transverse X-valley mass, and the prefactor is estimated to be small but not negligible. © 1987.
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