O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
The tunneling rate is calculated in a AlGaAs (100)-oriented barrier in GaAs, for a Fowler-Nordheim process in which electrons are scattered between the Γ minimum and the four lateral X minima by the alloy disorder. The effective exponent is found to be that given by the transverse X-valley mass, and the prefactor is estimated to be small but not negligible. © 1987.
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
P. Alnot, D.J. Auerbach, et al.
Surface Science
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997