Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
The tunneling rate is calculated in a AlGaAs (100)-oriented barrier in GaAs, for a Fowler-Nordheim process in which electrons are scattered between the Γ minimum and the four lateral X minima by the alloy disorder. The effective exponent is found to be that given by the transverse X-valley mass, and the prefactor is estimated to be small but not negligible. © 1987.
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
John G. Long, Peter C. Searson, et al.
JES