T.O. Sedgwick
JES
An anomalous enhanced diffusion is observed when As-implanted Si samples are exposed to rapid heating (∼ seconds) from room temperature to temperatures exceeding 1000°C. This diffusion can be characterized by a low activation energy of ∼1.8 eV and is active during a very short time (≲ 1 s) probably during the rapid heating up of the sample.
T.O. Sedgwick
JES
P. Agnello, T.O. Sedgwick, et al.
Applied Physics Letters
V.J. Silvestri, T.O. Sedgwick, et al.
Journal of Crystal Growth
G.S. Oehrlein, R. Kalish
Applied Physics Letters