PaperInterface kinetics and crystal growth under conditions of constant cooling rate. I. Constant diffusion coefficientR. Ghez, J.S. LewJournal of Crystal Growth
Conference paperInterface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substratesJ.H. Stathis, R. Bolam, et al.INFOS 2005
Conference paperCoupling analysis of through-silicon via (TSV) arrays in silicon interposers for 3D systemsBiancun Xie, Madhavan Swaminathan, et al.EMC 2011
PaperCurrent saturation in submicrometer graphene transistors with thin gate dielectric: Experiment, simulation, and theoryShu-Jen Han, Dharmendar Reddy, et al.ACS Nano
