E.D. Marshall, W.X. Chen, et al.
Applied Physics Letters
A thermally stable, nonspiking ohmic contact to p-GaAs has been developed based on the solid-phase regrowth mechanism. The contact metallization consists of a layered structure of Pd(250 Å)/Sb(100 Å)/Mn(10 Å)/Pd(250 Å)/p-GaAs. Thermal annealing of the contact between 300 and 600°C for 10 s yields contact resistivities in the range of low 10-6 Ω cm2 on substrates doped to 2.5×1018 cm-3. A contact resistivity of 4.5×10-7 Ω cm2 can be obtained after annealing at 500°C on samples with a doping concentration of 4.5×1019 cm-3. The contact metallization remains uniform in thickness and the contact interface is flat after the contact is formed. The consumption of the substrate is limited to less than a hundred angstroms. Contact resistivities are stable at 400°C.
E.D. Marshall, W.X. Chen, et al.
Applied Physics Letters
L.C. Wang, X.Z. Wang, et al.
Applied Physics Letters
S.S. Lau, W.K. Chu, et al.
Thin Solid Films
E.D. Marshall, B. Zhang, et al.
Journal of Applied Physics