Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
We report on the thermal-activation nature of magnetic switching in magnetic nanostructures, using the junction magnetoresistance of a current-perpendicular magnetic spin-valve device as a probe. A spin-valve junction structure was fabricated using electron-beam lithography. A sweep-rate-dependent magnetic switching field was obtained in the quasi-static limit. Results confirm the predictions of a single-domain thermal activation model. The scaling relation between the magnetic field sweep rate, the magnetic switching field, and the sample size is verified for sample dimensions of 0.1 × 0.2 μm2. © 2002 Elsevier Science B.V. All rights reserved.
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT