J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
We report on the thermal-activation nature of magnetic switching in magnetic nanostructures, using the junction magnetoresistance of a current-perpendicular magnetic spin-valve device as a probe. A spin-valve junction structure was fabricated using electron-beam lithography. A sweep-rate-dependent magnetic switching field was obtained in the quasi-static limit. Results confirm the predictions of a single-domain thermal activation model. The scaling relation between the magnetic field sweep rate, the magnetic switching field, and the sample size is verified for sample dimensions of 0.1 × 0.2 μm2. © 2002 Elsevier Science B.V. All rights reserved.
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials