J.K. Gimzewski, T.A. Jung, et al.
Surface Science
The rate equations for carriers injected into an amorphous semiconductor are considered for a simple model with radiative recombination of injected electron and holes and with emission and absorption of optical phonons of a single energy. The approximate energy dependence of the rate coefficients is calculated for a model of the band tail states. A steady-state solution of the rate equations is compared with experimental results for luminescence and photoconductivity in amorphous As2Te2Se. © 1972.
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures