A. Paccagnella, A.C. Callegari, et al.
IEEE T-ED
The thermal stability of polycrystalline silicon/metal oxide interfaces was investigated by using transmission electron microscopy (TEM). TEM showed strong reactions at the poly-Si/metal oxide interface when annealed at 1000°C. It was found that the thermal stability of polycrystalline silicon/metal oxide interface was significantly enhanced when the poly-Si was plasma deposited using silane diluted in He.
A. Paccagnella, A.C. Callegari, et al.
IEEE T-ED
J.F. Ziegler, T.H. Zabel, et al.
Physical Review Letters
E. Cartier, V. Narayanan, et al.
VLSI Technology 2004
E. Gusev, C. Cabral Jr., et al.
IEDM 2004