S. Zafar, Y.-H. Kim, et al.
VLSI Technology 2006
The thermal stability of polycrystalline silicon/metal oxide interfaces was investigated by using transmission electron microscopy (TEM). TEM showed strong reactions at the poly-Si/metal oxide interface when annealed at 1000°C. It was found that the thermal stability of polycrystalline silicon/metal oxide interface was significantly enhanced when the poly-Si was plasma deposited using silane diluted in He.
S. Zafar, Y.-H. Kim, et al.
VLSI Technology 2006
A.C. Callegari, B.K. Furman, et al.
ESSDERC 1992
A.C. Callegari, D.K. Sadana, et al.
Applied Physics Letters
S. Zafar, V. Narayanan, et al.
VLSI Technology 2005