A. Paccagnella, A.C. Callegari, et al.
Journal of Applied Physics
Paper
Thermal stability of polycrystalline silicon/metal oxide interfaces
Abstract
The thermal stability of polycrystalline silicon/metal oxide interfaces was investigated by using transmission electron microscopy (TEM). TEM showed strong reactions at the poly-Si/metal oxide interface when annealed at 1000°C. It was found that the thermal stability of polycrystalline silicon/metal oxide interface was significantly enhanced when the poly-Si was plasma deposited using silane diluted in He.
Related
A. Paccagnella, A.C. Callegari, et al.
IEEE T-ED
A.C. Callegari, K. Babich, et al.
ECS Meeting 2007
A.C. Callegari, E. Cartier, et al.
Journal of Applied Physics