Theory of substitutional deep traps in covalent semiconductors

Harold P. Hjalmarson; P. Vogl; D.J. Wolford; John D. Dow

doi:10.1103/PhysRevLett.44.810

Physical Review Letters

Paper

24 Mar 1980

Theory of substitutional deep traps in covalent semiconductors

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Abstract

The energies of substitutional deep A1 impurity levels in zinc-blende semiconductors are predicted and related to the impurities' atomic energies and to host dangling bond (ideal vacancy) energies. © 1980 The American Physical Society.

Paper

Minority-carrier recombination kinetics and transport in]] surface-free" GaAs/Al_xGa_1-xAs double heterostructures

G.D. Gilliland, D.J. Wolford, et al.

Journal of Applied Physics

Conference paper

Interface-free GaAs structures. From bulk to the quantum limit

D.J. Wolford, G.D. Gilliland, et al.

Gallium Arsenide and Related Compounds 1991

Conference paper

NITROGEN ISOELECTRONIC TRAP IN GaAs.

D.J. Wolford, J.A. Bradley, et al.

ICPS Physics of Semiconductors 1984

Review

Application of extended Hckel theory to GaAs, GaP, GaAs: N, and GaP: N

Coenraad A. Swarts, Donald L. Miller, et al.

Physical Review B

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Abstract

Related

Minority-carrier recombination kinetics and transport in]] surface-free" GaAs/AlxGa1-xAs double heterostructures

Interface-free GaAs structures. From bulk to the quantum limit

NITROGEN ISOELECTRONIC TRAP IN GaAs.

Application of extended Hckel theory to GaAs, GaP, GaAs: N, and GaP: N

Minority-carrier recombination kinetics and transport in]] surface-free" GaAs/Al_xGa_1-xAs double heterostructures