Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A thin (∼ 0.1 μm) layer is formed initially during the so-called "transient" period preceding the establishment of the steady state diffusion boundary layer in the melt, when films are dipped in a horizontal plane while undergoing axial rotation. Further evidence is given for the existence of the transient as a separate and distinct growth mode as compared to steady state growth. The transient layer, which grows comparatively rapidly, nevertheless has properties virtually identical to those of the subsequently grown steady state layer, except for its higher Pb concentration. © 1975.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
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