Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
The interaction between thermally grown SiO2 surfaces and hexafluoroazomethane was studied by means of soft X-ray photoemission. No interactions were observed for dark exposures, however, large exposures with simultaneous UV irradiation produced a surface layer consisting largely of trifluoromethyl radicals, the primary photolysis products of hexafluoroazomethane. The evolution of the surface as a function of annealing temperature is also discussed. © 1988.
T.N. Morgan
Semiconductor Science and Technology
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Langmuir
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Digital Discovery
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