An asymmetrical double-gate VCO with wide frequency range
Hung Ngo, Keunwoo Kim, et al.
VLSI-TSA 2006
We propose selective scaling of device footprint for 65 nm and beyond CMOS technologies. The benefits of selective scaling of device footprint are illustrated using an ultrathin-body fully depleted silicon-on-insulator transistor as an example. We study the effect of footprint scaling on device, circuit, and system level performance. A complete 2-D device structure is modeled for the numerical analysis. The results predict that an optimal footprint design can provide 30% smaller chip layout area, 20% faster speed, and 10% less dynamic power on overall chip performance benchmarked with a 53-bit pipelined multiplier. The variability analysis on both dc and ac characteristics indicates that the benefits of selective footprint scaling are not degraded by device variation. © 2007 IEEE.
Hung Ngo, Keunwoo Kim, et al.
VLSI-TSA 2006
Meng-Hsueh Chiang, Jeng-Nan Lin, et al.
IEEE Transactions on Electron Devices
Jae-Joon Kim, Rahul Rao, et al.
ICICDT 2008
Rajiv V. Joshi, Keunwoo Kim, et al.
IEEE Transactions on VLSI Systems