The high-Tc superconductor Sr0.2Lai1.8CuO4: A direct and inverse-photoemission study

T. Riesterer; J.G. Bednorz; K.A. Müller; B. Reihl

doi:10.1007/BF00617894

Applied Physics A Solids and Surfaces

Paper

01 Sep 1987

The high-T_c superconductor Sr_0.2Lai_1.8CuO₄: A direct and inverse-photoemission study

View publication

Abstract

We have measured ultraviolet and inverse-photoemission spectra of the novel superconductor Sr02La1.8CuO4. Our results compare favorably with recent band-structure calculations for La2CuO4. © 1987 Springer-Verlag.

Paper

Michael Hatzakis, semiconductor industry pioneer

J. Paraszczak, J.M. Shaw, et al.

Micro and Nano Engineering

Paper

Fabrication of Si/SiGe quantum point contacts by electron-beam lithography and shallow wet-chemical etching

U. Wieser, U. Kunze, et al.

Physica E: Low-Dimensional Systems and Nanostructures

Paper

Brillouin scattering investigation of paraelectric KH2PO4 near the tricritical point

R.W. Gammon, E. Courtens, et al.

Physical Review B

Conference paper

NEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.

S. Cohen, T.O. Sedgwick, et al.

MRS Proceedings 1983

View all publications

Abstract

Related

Michael Hatzakis, semiconductor industry pioneer

Fabrication of Si/SiGe quantum point contacts by electron-beam lithography and shallow wet-chemical etching

Brillouin scattering investigation of paraelectric KH2PO4 near the tricritical point

NEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.