Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Current, voltage, temperature (I-V-T) and conductance, voltage, temperature (G-V-T) as well as switching time measurements have been made on the switching states of bistable amorphous niobium pentoxide films. The measurements are indicative of a charge transfer mechanism occurring prior to switching. I-V-T and G-V-T measurements on the switching states for temperatures in the range 1.3 to 4.2°K as well as at 77°K are discussed. © 1972.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
T.N. Morgan
Semiconductor Science and Technology
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures