R. Ghez, M.B. Small
JES
Current, voltage, temperature (I-V-T) and conductance, voltage, temperature (G-V-T) as well as switching time measurements have been made on the switching states of bistable amorphous niobium pentoxide films. The measurements are indicative of a charge transfer mechanism occurring prior to switching. I-V-T and G-V-T measurements on the switching states for temperatures in the range 1.3 to 4.2°K as well as at 77°K are discussed. © 1972.
R. Ghez, M.B. Small
JES
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Revanth Kodoru, Atanu Saha, et al.
arXiv