Conference paper
First-principles calculations of diffusion constants in silicon
Peter E. Bloechl, C.G. Van de Walle, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
First-principles calculations were carried out to explore the role of ligands in determining the transport properties of the benzene-ring family of molecules. As an additional indication, ground-state density-functional calculations were performed on the three-ring molecule. Results show that, unlike in mesoscopic devices, temperature can produce significant effects on resonant tunneling in molecular structures.
Peter E. Bloechl, C.G. Van de Walle, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
D.B. Laks, C.G. Van De Walle, et al.
Physical Review B
P.J.H. Denteneer, C.G. Van De Walle, et al.
Physical Review Letters
S.T. Pantelides, J. Bernholc, et al.
International Journal of Quantum Chemistry