Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Temperature dependent transport through strained Si/SiGe hole resonant tunneling diodes has been studied. A quantitative measure of the different current components due to the conduction through the light hole and heavy hole resonant states at any particular bias and temperature has been obtained, and energy values for states in the SiGe well have been extracted. We also show that the quenching of the negative differential resistance at room temperature in hole resonant tunneling diodes is due to thermally assisted tunneling through higher resonant states.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Ronald Troutman
Synthetic Metals
J. Tersoff
Applied Surface Science