PaperOn the Removal of Insulator Process Induced Radiation Damage from Insulated Gate Field Effect Transistors at Elevated PressureA. Reisman, J.M. Aitken, et al.JES
Conference paperA High-Speed 128Kbit MRAM Core for Future Universal Memory ApplicationsA. Bette, J.K. DeBrosse, et al.VLSI Circuits 2003