M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Paper
Superlattice umklapp processes in resonant Raman scattering
Abstract
Umklapp resonant Raman scattering by LO phonons is observed in GaAsGa1-xAlxAs superlattices as a result of minizone formation in the conduction and valence bands. The scattering mechanism involves the wavevector dependent Fröhlich-type electron-phonon interaction. © 1978.
Related
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011