M.S. Goorsky, S.E. Lindo, et al.
Journal of Electronic Materials
Photocatalysis has widespread applications from solar cells to photolithography. We studied the photocatalytic properties of TiO2 films of thicknesses down to 2 nm, grown on n -type and p -type silicon wafers, using the oxidation of isopropanol as a model system. Direct in vacuo mass spectrometry measurements were performed under irradiation above the TiO 2 bandgap. We present a model consistent with our experimental results, which indicate that only near-surface electron-hole pair generation is relevant and that the reaction rate can be controlled by varying the substrate Fermi level in going from n -type to p -type silicon, by approximately a factor of 2. © 2009 American Institute of Physics.
M.S. Goorsky, S.E. Lindo, et al.
Journal of Electronic Materials
N.A. Bojarczuk, S. Guha
Proceedings of SPIE - The International Society for Optical Engineering
O. Gunawan, L. Sekaric, et al.
DRC 2008
V. Narayanan, V.K. Paruchuri, et al.
VLSI Technology 2006