George A. Sai-Halasz, Matthew R. Wordeman, et al.
IEEE Electron Device Letters
Fabrication, device profiles, and electrical characteristics of epitaxial-base double-poly self-aligned bipolar transistors are presented. The intrinsic-base regions in the present device structures reside above the silicon surface and were formed using boron-doped low-temperature epitaxially (LTE)-grown Si or Si-Ge layer to achieve a narrow intrinsic-base width (< 60 nm) and a low base pinch resistance (< 5 K/sq) simultaneously. As a result of the raised base using LTE and the preservation of the integrity of this layer by minimizing the dopant diffusion during the subsequent processing steps, walled-emitter devices with excellent electrical characteristics have been obtained. © 1991 IEEE
George A. Sai-Halasz, Matthew R. Wordeman, et al.
IEEE Electron Device Letters
D.L. Harame, J.M.C. Stork, et al.
IEDM 1988
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