J.H. Stathis, R. Bolam, et al.
INFOS 2005
We have used medium-energy ion scattering to determine the structure of the arsenic-saturated Si(111) surface. Unlike the clean surface, which is reconstructed with a (7×7) symmetry, the arsenic chemisorbed surface exhibits a (1×1) symmetry at near monolayer coverages. Ion-scattering yields show a decrease in the number of displaced silicon atoms due to a partial removal of the reconstruction accompanied by some disorder. The arsenic-silicon spacing is relaxed outwards from the bulk silicon interplanar spacing by 0.2±0.1 AìŠ. © 1988 The American Physical Society.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering