Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We have used medium-energy ion scattering to determine the structure of the arsenic-saturated Si(111) surface. Unlike the clean surface, which is reconstructed with a (7×7) symmetry, the arsenic chemisorbed surface exhibits a (1×1) symmetry at near monolayer coverages. Ion-scattering yields show a decrease in the number of displaced silicon atoms due to a partial removal of the reconstruction accompanied by some disorder. The arsenic-silicon spacing is relaxed outwards from the bulk silicon interplanar spacing by 0.2±0.1 AìŠ. © 1988 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
P.C. Pattnaik, D.M. Newns
Physical Review B
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Surface Science