Conference paper
Optical receivers in CMOS using Ge-on-SOI photodiodes
C.L. Schow, S.J. Koester, et al.
LEOS 2006
The demonstration of an integrated circuit was performed by using high mobility p-channel modulation doped field effect transistors (MODFET). The circuit was based on source-coupled FET logic and also included level-shifted source followers to match the output voltages with respect to the input voltages required by the devices. It was found that the circuits operated up to a maximum clock frequency of 2.9 GHz.
C.L. Schow, S.J. Koester, et al.
LEOS 2006
L. Tilly, P.M. Mooney, et al.
Applied Physics Letters
Huiling Shang, E. Gousev, et al.
ICSICT 2004
M. Arafa, P. Fay, et al.
IEEE Electron Device Letters