Amlan Majumdar, Yanning Sun, et al.
IEEE T-ED
We investigate the sputtering behavior and depth resolution upon low energy ion irradiation during Secondary Ion Mass Spectrometry (SIMS) depth profiling of GaAs. We present a systematic and quantitative study of the impact of ion species, primary ion impact energy, and incident angle on the evolution of depth resolution, using a well-defined InGaAs/GaAs multilayer structure with highly abrupt hetero-interfaces. We demonstrate that for low energy O2+ ion beam irradiation, SIMS depth resolution becomes progressively degraded by (transient) incorporation of high surface O-concentration levels in the altered layer, leading to detrimental ion-beam induced formation of topography. In case of low energy oblique Cs+ ion beam irradiation, sputtering behavior of GaAs is well-behaved with no significant transient yield changes and a constant depth resolution. This enables SIMS depth profiling of sharp hetero-epitaxial III-V compound semiconductor structures and shallow dopant profiles with sufficiently good depth resolution with good detection efficiency. ©The Electrochemical Society.
Amlan Majumdar, Yanning Sun, et al.
IEEE T-ED
Arpan P. Mahorowala, Dario L. Goldfarb, et al.
Microlithography 2003
Huai-Yu Cheng, I. Kuo, et al.
VLSI Technology 2020
Catherine Dubourdieu, E. Cartier, et al.
Applied Physics Letters