Hiroshi Ito, Reinhold Schwalm
JES
It is convenient to define the spin-torque switching efficiency in nanostructured magnetic tunnel junctions as the ratio between the free-layers thermal activation barrier height Eb and the threshold switching current Ic0. Recent device exploration has led to occasional observations of spin-torque induced magnetic switching efficiency in magnetic tunnel junctions that exceeds the macrospin limit by a factor of 2-10. In this paper we examine the possible origins for such enhancement, and materials properties that may allow the full realization of such enhancements. © 2013 American Physical Society.
Hiroshi Ito, Reinhold Schwalm
JES
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters