K.A. Chao
Physical Review B
The 1s(A1)2p0 and 2p transitions in Te donors in GaP have been observed. Together with similar data for Si and S donors, Faulkner's effective-mass (EM) calculations yield an ionization energy of 89.80.3 meV for Te donors. Conduction-band effective masses consistent with all the data for these GaP donors are m=(0.1800.005)m0 and mII=(1.50.2)m0. The effects of uniaxial stress on the "two-electron" transitions in the recombination of excitons bound to neutral Te donors in GaP are consistent with the final donor states observed being s-like with a valley-orbit splitting. © 1970 The American Physical Society.
K.A. Chao
Physical Review B
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films