H. Schmid, Bruno Michel
Macromolecules
We demonstrate the implementation of tunneling field-effect transistors (TFETs) based on silicon nanowires (NWs) that were grown using the vapor-liquid-solid growth method. The Si NWs contain p-i- n+ segments that were achieved by in situ doping using phosphine and diborane as the n - and p -type dopant source, respectively. Electrical measurements of the TFETs show a band-to-band tunneling branch in the transfer characteristics. Furthermore, an increase in the on-state current and a decrease in the inverse subthreshold slope upon reducing the gate oxide thickness are measured. This matches theoretical calculations using a Wenzel Kramer Brillouin approximation with nanowire diameter and oxide thickness as input parameters. © 2008 American Institute of Physics.
H. Schmid, Bruno Michel
Macromolecules
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CLEO/Europe-EQEC 2023
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Solid-State Electronics
J. Knoch, S. Mantl, et al.
Solid-State Electronics