T.V. Herak, T.T. Chau, et al.
Journal of Applied Physics
Noncontact damping of a cantilever vibrating near a silicon surface was used to measure localized electrical dissipation. The dependence of the damping on tip-sample distance, applied voltage, carrier mobility, and dopant density was studied for n- and p-type silicon samples with dopant densities of 1014-1018cm-3. Dopant imaging with 150 nm spatial resolution was demonstrated. © 1999 American Institute of Physics.
T.V. Herak, T.T. Chau, et al.
Journal of Applied Physics
B.C. Stipe, H.J. Mamin, et al.
Physical Review Letters
D. Rugar, B.C. Stipe, et al.
Applied Physics A: Materials Science and Processing
B.W. Chui, M. Asheghi, et al.
Microscale Thermophysical Engineering