Semiconductor lasers

Marshall I. Nathan

doi:10.1364/AO.5.001514

Applied Optics

Paper

01 Oct 1966

Semiconductor lasers

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Abstract

This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described. © 1966 Optical Society of America.

Paper

Stimulated emission of radiation from GaAs p-n junctions

Marshall I. Nathan, William P. Dumke, et al.

Applied Physics Letters

Paper

Electroluminescence and photoluminescence of GaAs at 77°K

Marshall I. Nathan, Gerald Burns, et al.

Physical Review

Paper

Time dependence of the reflectivity of Si at 633 and 488 nm during pulsed laser annealing

Marshall I. Nathan, R.T. Hodgson, et al.

Applied Physics Letters

Paper

Quantum efficiency of ruby [2]

Gerald Burns, Marshall I. Nathan

Journal of Applied Physics

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Abstract

Related

Stimulated emission of radiation from GaAs p-n junctions

Electroluminescence and photoluminescence of GaAs at 77°K

Time dependence of the reflectivity of Si at 633 and 488 nm during pulsed laser annealing

Quantum efficiency of ruby [2]