PaperElectroluminescence near band gap in gallium phosphide containing shallow donor and acceptor levelsL.M. Foster, M.H. PilkuhnApplied Physics Letters
PaperThe Effect of Deep Levels due to Copper on the Optical and Electrical Properties of GaAs p-n JunctionsM.H. Pilkuhn, H. RupprechtIEEE T-ED
PaperA Relation Between the Current Density at Threshold and the Length of Fabry-Perot Type GaAs LasersM.H. Pilkuhn, H. RupprechtProceedings of the IEEE
PaperSpontaneous and stimulated emission from gaas diodes with three-layer structuresM.H. Pilkuhn, H. RupprechtJournal of Applied Physics
