Changhwan Choi, Kam-Leung Lee, et al.
Applied Physics Letters
In this letter, we report self-aligned n-channel germanium (Ge) MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate electrode. Excellent off-state current is achieved through the reduction of junction leakage. For the first time, we have demonstrated an n-channel Ge MOSFET with a subthreshold slope of 150 mV/dec and an on-off current ratio of ∼10 4.
Changhwan Choi, Kam-Leung Lee, et al.
Applied Physics Letters
E. Gusev, D.A. Buchanan, et al.
Technical Digest - International Electron Devices Meeting
Huilong Zhu, Kam-Leung Lee, et al.
SISPAD 2002
E. Gusev, V. Narayanan, et al.
IEDM 2004