R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
Schottky barrier probe tunneling is reviewed as a method for measuring gaps in the electronic density of states of exotic materials. Although there have been notable successes, the Schottky barrier itself is found to produce an intrinsic zero bias resistance peak, which limits the usefulness to strong, well-defined gaps. © 1985.
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
Frank Stem
C R C Critical Reviews in Solid State Sciences
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME