R.A. McCorkle, H.J. Vollmer
Review of Scientific Instruments
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
R.A. McCorkle, H.J. Vollmer
Review of Scientific Instruments
Ulf Gennser, V.P. Kesan, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Q.Y. Ma, X. Wu, et al.
Physica C: Superconductivity and its applications
J.D. Cressler, D.D. Tang, et al.
Workshop on Low Temperature Semiconductor Electronics 1989