H.K. Liou, X. Wu, et al.
Applied Physics Letters
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
H.K. Liou, X. Wu, et al.
Applied Physics Letters
E.S. Yang, C.M. Wu, et al.
Journal of Applied Physics
Q.Y. Ma, Chin-An Chang, et al.
Journal of Applied Physics
R.A. McCorkle, H.J. Vollmer
Review of Scientific Instruments