David Barras, George Von Bueren, et al.
RFIC 2009
Fully ion-implanted GaAs depletion MESFET's with gate lengths from 1 µm down to 0.1 µm and with closely spaced source and drain contacts have been fabricated with electron-beam lithography Gate-length dependence of transconductance, capacitance, output conductance, and threshold voltage is presented. Maximum transconductance obtained was 370 mS/mm for 0.1-gm gate length. The experimental data indicate that shallow implants do indeed result in better devices, but further vertical scaling of the devices is mandatory. © 1986 IEEE
David Barras, George Von Bueren, et al.
RFIC 2009
Luigi R. Brovelli, Douglas J. Arent, et al.
IEEE JQE
George Von Bueren, David Barras, et al.
ESSCIRC 2009
Yvan D. Galeuchet, Peter Roentgen, et al.
Applied Physics Letters