J. Tersoff
Physical Review B - CMMP
At semiconductor-metal junctions, the Schottky barrier height is generally fixed by “Fermi-level pinning.” We find that when a semiconducting carbon nanotube is end contacted to a metal (the optimal geometry for nanodevices), the behavior is radically different. Even when the Fermi level is fully “pinned” at the interface, the turn-on voltage is that expected for an unpinned junction. Thus the threshold may be adjusted for optimal device performance, which is not possible in planar contacts. Similar behavior is expected at heterojunctions between nanotubes and semiconductors. © 2000 The American Physical Society.
J. Tersoff
Physical Review B - CMMP
François Léonard, J. Tersoff
Physical Review Letters
J. Tersoff
Applied Physics Letters
P.M. Mooney, F.K. LeGoues, et al.
Journal of Applied Physics