A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Using an advanced reflection high energy electron diffraction (RHEED) system we found oscillations of the in-plane lattice spacing on the monolayer scale during deposition of Co on Cu(001) [J. Fassbender et al., Phys. Rev. Lett. 75 (1995) 4476]. Here we present in detail the influence of the deposition rate on these oscillations and therefore on the growth process. With increasing deposition rate an enhanced variation of the in-plane lattice spacing occurs which is interpreted as a transition from a layer-by-layer to a more three-dimensional growth mode only for the first two monolayers. An unexpected linear behavior between the deposition rate and the maximum in-plane relaxation is found.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001