Conference paper
High-performance SiGe pMODFETs grown by UHV-CVD
S.J. Koester, R. Hammond, et al.
EDMO 1999
The minimum epitaxial layer thickness required to produce relaxed, thermally stable, Si0.7Ge0.3 buffer layer structures for high electron- and hole-mobility devices has been determined, using high resolution x-ray diffraction. A 1.4-μm-thick layer, step graded to x=0.35, is sufficiently thick so that the residual strain in a uniform composition Si 0.33Ge0.67 layer grown on top of it is essentially independent of thickness or growth temperature of the layer. Such structures are stable when annealed at 750°C.© 1995 American Institute of Physics.
S.J. Koester, R. Hammond, et al.
EDMO 1999
J.C. Tsang, F.H. Dacol, et al.
Applied Physics Letters
E. Calleja, P.M. Mooney, et al.
Applied Physics Letters
S.J. Koester, K. Ismail, et al.
DRC 1997