J.R. Lloyd
Microelectronics Reliability
The relationship between interfacial adhesion and electromigration in Cu metallization was discussed. The electromigration drift velocity and lifetime in a conventional electromigration was also derived. The results indicated a linear relationship between the electromigration activation energy and the intrinsic work of adhesion.
J.R. Lloyd
Microelectronics Reliability
J.C. Hay, E. Liniger, et al.
MRS Online Proceedings Library
Qinghuang Lin, Shyng-Tsong Chen, et al.
Proceedings of SPIE - The International Society for Optical Engineering 2010
C.-K. Hu, E. Liniger, et al.
MRS Spring Meeting 2013