M. Aono, T.-C. Chiang, et al.
Solid State Communications
We report new evidence that intrinsic surface states play a predominant role in determining Schottky-barrier energies for III-V semiconductors. Namely, empty surfacestate levels have been measured (using photoelectron yield spectroscopy) for (110) GaSb, GaAs, GaP, InSb, and InAs whose one-electron energies correlate with Schottky-barrier energies reported by Mead and Spitzer. Also, these sharp molecularlike surface states are shown to be insensitive to metal overlayers and to be cation derived. © 1975 The American Physical Society.
M. Aono, T.-C. Chiang, et al.
Solid State Communications
G. Güntherodt, J. Freeouf, et al.
Solid State Communications
D.E. Eastman, W.F. Krolikowski
Physical Review Letters
D.E. Eastman, Moshe Kuznietz
Physical Review Letters