Reflectivity and band structure of EuO

P.M. Grant; J.C. Suits

doi:10.1063/1.1652762

Applied Physics Letters

Paper

17 Oct 2003

Reflectivity and band structure of EuO

View publication

Abstract

Near-normal incidence reflectivity of single-crystal EuO is reported for the energy range 1-9 eV. Results are interpreted in terms of recent band-structure calculations. © 1969 The American Institute of Physics.

Paper

Preparation and properties of nonstoichiometric MnAlGe thin films

Kenneth Lee, Erich Sawatzky, et al.

Journal of Applied Physics

Paper

X-ray-absorption near-edge-structure studies in hexamethylenetetraselenafulvalene (HMTSF) and HMTSF-tetracyanoquinodimethane (HMTSF-TCNQ) and -tetrafluorotetracyanoquinodimethane (HMTSF-TFTCNQ)

P.M. Grant, W.D. Gill, et al.

Physical Review B

Paper

Stabilization of the high-temperature phase of MnBi by the addition of rhodium or ruthenium

Kenneth Lee, J.C. Suits, et al.

Applied Physics Letters

Paper

The mechanism of arsenic pentafluoride doping of polyacetylene

T.C. Clarke, R.H. Geiss, et al.

Synthetic Metals

View all publications

Abstract

Related

Preparation and properties of nonstoichiometric MnAlGe thin films

X-ray-absorption near-edge-structure studies in hexamethylenetetraselenafulvalene (HMTSF) and HMTSF-tetracyanoquinodimethane (HMTSF-TCNQ) and -tetrafluorotetracyanoquinodimethane (HMTSF-TFTCNQ)

Stabilization of the high-temperature phase of MnBi by the addition of rhodium or ruthenium

The mechanism of arsenic pentafluoride doping of polyacetylene