William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
The reflectance of low- k porous organosilicate glass (SiCOH) as a function of photon energy under synchrotron vacuum ultraviolet (VUV) radiation was measured using a nickel mesh reflectometer. The authors found that during VUV irradiation, the reflectance of SiCOH and the substrate current were inversely correlated. Thus, reflectance can be inferred from substrate current measurements and vice versa. The authors conclude that reflectance or substrate current measurements can determine the photon energies that are absorbed and, therefore, cause dielectric damage during processing. Thus, reducing the flux of deleterious photon energies in processing systems can minimize dielectric damage. © 2010 American Vacuum Society.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
Lawrence Suchow, Norman R. Stemple
JES