Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Electromigration in Cu interconnections with a 10-nm thick selective electroless CoWP coating on the top surface of Cu dual damascene lines has been investigated. The grain structures of the lines embedded in SiLK semiconductor dielectric ranged from bamboo-like to polycrystalline. CoWP coated structures exhibited a greatly improved Cu electromigration lifetime which was attributed to a reduction in Cu interface diffusion. © 2003 Elsevier B.V. All rights reserved.
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Robert W. Keyes
Physical Review B
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APS Global Physics Summit 2025
J.L. Hurd, K.P. Rodbell, et al.
Applied Physics Letters