P. Vidakovic, J. Zyss, et al.
Synthetic Metals
Paper
Reading and writing of photochemical holes using GaAlAs-diode lasers
Abstract
A current-tuned GaAlAs-diode laser is utilized both to burn and to detect narrow photochemical holes in the inhomogeneously broadened 833-nm zero-phonon line of the R’ color center in LiF. Applications for reading and writing data into frequency-domain optical memories based on photochemical hole burning are discussed. © 1983 Optical Society of America.
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