J.H. Stathis, R. Bolam, et al.
INFOS 2005
Paper
Raman scattering in amorphous Si, Ge and III-V semiconductors
Abstract
A phenomenological explanation of Raman scattering in amorphous Si, Ge and III-V semiconductors is given, using Si as an example. Several applications of Raman scattering to the study of amorphous materials are discussed. © 1972.
Related
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
A. Gangulee, F.M. D'Heurle
Thin Solid Films
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron