Deepika Priyadarshini, Son Nguyen, et al.
IITC/AMC 2014
Plasma enhanced chemical vapor deposition technique was used to prepare carbon doped oxide dielectrics comprised of Si, C, O and H (SiCOH). Low-k films with a dielectric constant (k) of about 2.8 were deposited from tetramethylcyclotetrasiloxane (TMCTS). The entire range of SiCOH films demonstrated relatively low coefficients of thermal expansion of about 12×10-6 K and mechanical properties that make them suitable for integration as the interconnect dielectric in ultralarge scale integration (ULSI) devices.
Deepika Priyadarshini, Son Nguyen, et al.
IITC/AMC 2014
Joseph Abel, Akitomo Matsubayashi, et al.
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Deborah A. Neumayer, Peter R. Duncombe, et al.
Integrated Ferroelectrics
Deborah A. Neumayer, Robert J. Purtell, et al.
Integrated Ferroelectrics