Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Persistent spectral holes were observed in the R-lines of SrTiO3+ at 2 K. The hole burning mechanism was shown to be due to a two-photon or gated process, where a second optical excitation causes bleaching by photoionization of Cr3+. The trapping center responsible for the hole burning is postulated to be an oxygen vacancy in the lattice associated with a Cr3+ ion. A series of samples reduced at different temperatures was studied, and the hole burning efficiency was seen to be strongly dependent on reduction temperature. © 1994.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
T.N. Morgan
Semiconductor Science and Technology