Photoluminescence from pseudomorphic Si1-xGex quantum wells grown by molecular beam epitaxy. Variation of the band gap with high pressure

G. Northrop; J.F. Morar; D.J. Wolford; J.A. Bradley

doi:10.1116/1.586178

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Paper

01 Jul 1992

Photoluminescence from pseudomorphic Si_1-xGe_x quantum wells grown by molecular beam epitaxy. Variation of the band gap with high pressure

View publication

Abstract

Near-edge photoluminescence (PL) from quantum wells (QWs) has been observed. QW emission variations are measured under applied hydrostatic pressure. It is found that strong emission comes from X1-band edge.

Conference paper

NEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.

S. Cohen, T.O. Sedgwick, et al.

MRS Proceedings 1983

Conference paper

True 3-D displays for avionics and mission crewstations

Elizabeth A. Sholler, Frederick M. Meyer, et al.

SPIE AeroSense 1997

Paper

(S)PEEC: Time- and Frequency-Domain Surface Formulation for Modeling Conductors and Dielectrics in Combined Circuit Electromagnetic Simulations

Dipanjan Gope, Albert E. Ruehli, et al.

IEEE T-MTT

Paper

Scanning tunneling microscopy and spectroscopy of thin metal films on the GaAs(110) surface

P. Martensson, R.M. Feenstra

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

View all publications

Abstract

Related

NEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.

True 3-D displays for avionics and mission crewstations

(S)PEEC: Time- and Frequency-Domain Surface Formulation for Modeling Conductors and Dielectrics in Combined Circuit Electromagnetic Simulations

Scanning tunneling microscopy and spectroscopy of thin metal films on the GaAs(110) surface