I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
The CO/NH3 plasma chemistry operated under conventional reactive ion etching conditions does not etch NiFe or NiFeCo. However, under high density plasma conditions, etch rates up to ∼500 Å min-1 are obtained for both materials provided optimized ratios of CO and values of ion flux and ion energy are employed. The etch mechanism still has a strong physical component and appears to depend on having sufficient CO to form carbonyl etch products, and to avoid formation of a carbide-like surface layer. Under nonoptimized conditions, the latter can lead to net deposition rather than etching. © 1999 American Vacuum Society.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
A. Reisman, M. Berkenblit, et al.
JES