I. Adesida, M. Arafa, et al.
Microelectronic Engineering
Large-area arrays of parallel quantum wires of 30-80 nm width are achieved using a combination of x-ray lithography, wet chemical etching, and low-pressure metalorganic vapor phase epitaxy. The quantum wires are characterized using low-temperature photoluminescence and magnetotransport measurements. The quantum confinement is reflected in a clear blue shift in the luminescence peak, and in deviation from the periodicity of the Shubnikov-de Haas oscillations as a function of inverse magnetic field.
I. Adesida, M. Arafa, et al.
Microelectronic Engineering
W. Lu, X.W. Wang, et al.
IEEE Electron Device Letters
K. Ismail, S. Washburn, et al.
Applied Physics Letters
K. Lai, S. Burns, et al.
SPIE Advanced Lithography 2008